? 2008 ixys corporation, all rights reserved symbol test conditions maximum ratings v ces t c = 25c to 150c 600 v v cgr t j = 25c to 150c, r ge = 1m 600 v v ges continuous 20 v v gem transient 30 v i c110 t c = 110c 48 a i cm t c = 25c, 1ms 300 a ssoa v ge = 15v, t vj = 125c, r g = 5 i cm = 96 a (rbsoa) clamped inductive load @ 600v p c t c = 25c 300 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6mm (0.062 in.) from case for 10s 300 c t sold plastic body for 10 seconds 260 c m d mounting torque (to-247 & to-220) 1.13/10 nm/lb.in. weight to-247 6.0 g to-220 3.0 g to-263 2.5 g ds99581b(07/08) ixga48n60a3 ixgh48n60a3 IXGP48N60A3 g = gate c = collector e = emitter tab = collector symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. bv ces i c = 250 a, v ge = 0v 600 v v ge(th) i c = 250 a, v ce = v ge 3.0 5.0 v i ces v ce = v ces 25 a v ge = 0v t j = 125c 250 a i ges v ce = 0v, v ge = 20v 100 na v ce(sat) i c = 32a, v ge = 15v, note 1 1.18 1.35 v v ces = 600v i c110 = 48a v ce(sat) 1.35v to-220 (ixgp) to-263 (ixga) g e to-247 (ixgh) g e c g c e (tab) (tab) (tab) genx3 tm 600v igbt features z optimized for low conduction losses z international standard packages advantages z high power density z low gate drive requirement applications z power inverters z ups z motor drives z smps z pfc circuits z battery chargers z welding machines z lamp ballasts z inrush current protection circuits ultra low vsat pt igbt for up to 5khz switching
ixys reserves the right to change limits, test conditions and dimensions. ixga48n60a3 ixgh48n60a3 IXGP48N60A3 symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. g fs i c = 32a, v ce = 10v, note 1 30 48 s c ies 3190 pf c oes v ce = 25v, v ge = 0v, f = 1mhz 175 pf c res 43 pf q g 110 nc q ge i c = 32a, v ge = 15v, v ce = 0.5 ? v ces 21 nc q gc 42 nc t d(on) 25 ns t ri 30 ns e on 0.95 mj t d(off) 334 ns t fi 224 ns e off 2.90 mj t d(on) 24 ns t ri 30 ns e on 1.97 mj t d(off) 545 ns t fi 380 ns e off 5.60 mj r thjc 0.42 c/w r thcs (to-247) 0.25 c/w (to-220) 0.50 c/w note 1: pulse test, t 300 s; duty cycle, d 2%. ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 pins: 1 - gate 2 - drain 3 - source 4 - drain to-220 (ixgp) outline dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc e ? p to-247 (ixgh) outline inductive load, t j = 25c i c = 32a, v ge = 15v v ce = 480v, r g = 5 inductive load, t j = 25c i c = 32a, v ge = 15v v ce = 480v, r g = 5 to-263 (ixga) outline
? 2008 ixys corporation, all rights reserved ixga48n60a3 ixgh48n60a3 IXGP48N60A3 fig. 1. output characteristics @ 25oc 0 10 20 30 40 50 60 70 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 v ce - volts i c - amperes v ge = 15v 13v 11v 7v 9v fig. 2. extended output characteristics @ 25oc 0 30 60 90 120 150 180 210 240 270 300 330 0 2 4 6 8 101214 v ce - volts i c - amperes v ge = 15v 13v 7v 11v 9v fig. 3. output characteristics @ 125oc 0 10 20 30 40 50 60 70 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 v ce - volts i c - amperes v ge = 15v 13v 11v 7v 9v fig. 4. dependence of v ce(sat) on junction temperature 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade v ce(sat) - normalized v ge = 15v i c = 64a i c = 32a i c = 16a fig. 5. collector-to-emitter voltage vs. gate-to-emitter voltage 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 6 7 8 9 10 11 12 13 14 15 v ge - volts v ce - volts i c = 64a 32a 16a t j = 25oc fig. 6. input admittance 0 20 40 60 80 100 120 140 160 180 200 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 v ge - volts i c - amperes t j = 125oc 25oc - 40oc
ixys reserves the right to change limits, test conditions and dimensions. ixga48n60a3 ixgh48n60a3 IXGP48N60A3 fig. 11. maximum transient thermal impedance 0.01 0.10 1.00 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w fig. 7. transconductance 0 10 20 30 40 50 60 70 0 102030405060708090100 i c - amperes g f s - siemens t j = - 40oc 25oc 125oc fig. 10. reverse-bias safe operating area 0 10 20 30 40 50 60 70 80 90 100 100 150 200 250 300 350 400 450 500 550 600 650 v ce - volts i c - amperes t j = 125oc r g = 5 ? dv / dt < 10v / ns fig. 8. gate charge 0 2 4 6 8 10 12 14 16 0 10 20 30 40 50 60 70 80 90 100 110 120 q g - nanocoulombs v ge - volts v ce = 300v i c = 32a i g = 10ma fig. 9. capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ce - volts capacitance - picofarads f = 1 mhz c ies c oes c res ixys ref: g_48n60a3(56) 07-10-08-a
? 2008 ixys corporation, all rights reserved ixga48n60a3 ixgh48n60a3 IXGP48N60A3 fig. 12. inductive switching energy loss vs. gate resistance 0 2 4 6 8 10 12 14 10 12 14 16 18 20 22 24 26 28 30 r g - ohms e off - millijoules 0 1 2 3 4 5 6 7 e on - millijoules e off e on - - - - t j = 125oc , v ge = 15v v ce = 480v i c = 32a i c = 64a i c = 16a fig. 15. inductive turn-off switching times vs. gate resistance 340 360 380 400 420 440 460 480 500 520 0 3 6 9 12151821242730 r g - ohms t f - nanoseconds 400 450 500 550 600 650 700 750 800 850 t d(off) - nanoseconds t f t d(off ) - - - - t j = 125oc, v ge = 15v v ce = 480v i c = 64a 16a 32a 16a 32a 64a fig. 13. inductive switching energy loss vs. collector current 1 3 5 7 9 11 13 15 20 25 30 35 40 45 50 55 60 65 i c - amperes e off - millijoules 0 1 2 3 4 5 6 e on - millijoules e off e on - - - - r g = 5 ? , v ge = 15v v ce = 480v t j = 125oc t j = 25oc fig. 14. inductive switching energy loss vs. junction temperature 1 2 3 4 5 6 7 8 9 10 11 12 13 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade e off - millijoules 0 1 2 3 4 5 6 e on - millijoules e off e on - - - - r g = 5 ? , v ge = 15v v ce = 480v i c = 32a i c = 64a i c = 16a fig. 16. inductive turn-off switching times vs. collector current 150 200 250 300 350 400 450 500 15 20 25 30 35 40 45 50 55 60 65 i c - amperes t f - nanoseconds 300 350 400 450 500 550 600 650 t d(off) - nanoseconds t f t d(off) - - - - r g = 5 ? , v ge = 15v v ce = 480v t j = 125oc t j = 25oc fig. 17. inductive turn-on switching times vs. junction temperature 10 20 30 40 50 60 70 80 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t r - nanoseconds 21 22 23 24 25 26 27 28 t d(on) - nanoseconds t r t d(on) - - - - r g = 5 ? , v ge = 15v v ce = 480v i c = 16a i c = 32a i c = 64a
ixys reserves the right to change limits, test conditions and dimensions. ixga48n60a3 ixgh48n60a3 IXGP48N60A3 ixys ref: g_48n60a3(56) 07-10-08-a fig. 20. inductive turn-off switching times vs. junction temperature 200 240 280 320 360 400 440 480 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t f - nanoseconds 300 350 400 450 500 550 600 650 t d(off) - nanoseconds t f t d(off) - - - - r g = 5 ? , v ge = 15v v ce = 480v i c = 64a, 32a, 16a i c = 64a, 32a, 16a fig. 18. inductive turn-on switching times vs. gate resistance 20 30 40 50 60 70 80 90 100 10 12 14 16 18 20 22 24 26 28 30 r g - ohms t r - nanoseconds 24 28 32 36 40 44 48 52 56 t d(on) - nanoseconds t r t d(on) - - - - t j = 125oc, v ge = 15v v ce = 480v i c = 64a i c = 16a i c = 32a fig. 19. inductive turn-on switching times vs. collector current 0 10 20 30 40 50 60 70 15 20 25 30 35 40 45 50 55 60 65 i c - amperes t r - nanoseconds 21 22 23 24 25 26 27 28 t d(on) - nanoseconds t r t d(on) - - - - r g = 5 ? , v ge = 15v v ce = 480v t j = 125oc t j = 25oc 25oc < t j < 125oc
|
